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NGD8201N

Features: • Ideal for Coil−on−Plug and Driver−on−Coil Applications• DPAK Package Offers Smaller Footprint for Increased Board Space• Gate−Emitter ESD Protection• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied t...

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NGD8201N: Features: • Ideal for Coil−on−Plug and Driver−on−Coil Applications• DPAK Package Offers Smaller Footprint for Increased Board Space• Gate−Emitter ESD ...

NGD8201N Data Sheet

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Part Number:
NGD8201N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)




Application

• Ignition Systems


Specifications

Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
440
V
Collector−Gate Voltage
VCER
440
V
Gate−Emitter Voltage
VGE
±15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t 2 ms,
f 100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
125
0.83
W
W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to +175
°C



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