IGBT Transistors NGD8201ANT4G GEN4 IGBT
NGD8201ANT4G: IGBT Transistors NGD8201ANT4G GEN4 IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 440 V | ||
Collector-Emitter Saturation Voltage : | 1.5 V | Maximum Gate Emitter Voltage : | 15 V | ||
Continuous Collector Current at 25 C : | 20 A | Gate-Emitter Leakage Current : | 300 uA | ||
Power Dissipation : | 125 W | Maximum Operating Temperature : | + 175 C | ||
Package / Case : | DPAK | Packaging : | Reel |