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NEZ7785-4D

Features: • Internally matched to 50 • High power output• High linear gain• High reliability• Low distortionSpecifications CHARACTERISTIC SYMBOL RATINGS UNIT NEZ-4D, 4DD NEZ-8D, 8DD Drain to Source Voltage VDS 15 15 V Gate to ...

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NEZ7785-4D: Features: • Internally matched to 50 • High power output• High linear gain• High reliability• Low distortionSpecifications CHARACTERISTIC SYMBOL RATINGS ...

NEZ7785-4D Data Sheet

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Part Number:
NEZ7785-4D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion




Specifications

CHARACTERISTIC
SYMBOL
RATINGS
UNIT
NEZ-4D, 4DD
NEZ-8D, 8DD
Drain to Source Voltage
VDS
15
15
V
Gate to Source Voltage
VGS
12
12
V
Gate to Drain Voltage
VGD
18
18
V
Drain Current
ID
4.5
9.0
A
Gate Current
IG
25
50
mA
Total Power Dissipation
PT
25
50
W
Channel Temperature
Tch
175
175
°C
Storage Temperature
Tstg
65 to + 175
65 to + 175
°C



Description

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits of NEZ Series matched to 50 are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the NEZ Series has a PHS (Plated Heat Sink) structure.

NEC's NEZ Series strigent quality assurance and test procedures guarantee the highest reliability and performance.




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