NEZ7177-8B/D

The NEZ7177-8B/D is designed as one kind of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz.Internal input and output thin film matching circuits are designed to optimize performance in 50 external circuits.NEZ7177-8B/D uses a 0.8 um gate length for increased linear gain and reduces thermal resistance and enhances electrical performance.And this series of internally matched power FETs is space qualified.

Features of the NEZ7177-8B/D are:(1)internally matched(in/out);(2)high Pout(4W,8W,15W);(3)class a operation;(4)low IM3(-45 dBc typ.);(5)hermetically sealed metal/ceramic package;(6)space qualified.And it can be used in analog communications and digital communications.

The absolute maximum ratings of the NEZ7177-8B/D can be summarized as:(1)drain to source voltage:15 V;(2)gate to drain voltage:-18 V;(3)gate to source voltage:-7 V;(4)drain current:4.5/7.5/15 A;(5)storage temperature:-65°C to +175°C;(6)gate current"25/50/100 mA;(7)channel temperature:+175°C;(8)total power dissipation Tcase=+25°C:25 W.If you want to know more information such as the electrical characteristics about the NEZ7177-8B/D,please download the datasheet in www.seekic.com or www.chinaicmart.com .