Transistors RF Bipolar Small Signal NPN Lo-Noise Hi-Gain
NE856M03-A: Transistors RF Bipolar Small Signal NPN Lo-Noise Hi-Gain
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Configuration : | Single | Transistor Polarity : | NPN | ||
Maximum Operating Frequency : | 4 GHz | Collector- Emitter Voltage VCEO Max : | 12 V | ||
Emitter- Base Voltage VEBO : | 3 V | Continuous Collector Current : | 0.1 A | ||
Power Dissipation : | 0.125 W | Package / Case : | M03 |
Technical/Catalog Information | NE856M03-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.4dB ~ 2.5dB @ 1GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Gain | - |
Power - Max | 125mW |
Compression Point (P1dB) | - |
Package / Case | 3-XSOF, MiniMold |
Packaging | Bulk |
Drawing Number | * |
Mounting Type | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE856M03 A NE856M03A |