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NE856M03-A

Transistors RF Bipolar Small Signal NPN Lo-Noise Hi-Gain

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SeekIC No. : 00218537 Detail

NE856M03-A: Transistors RF Bipolar Small Signal NPN Lo-Noise Hi-Gain

NE856M03-A Data Sheet

floor Price/Ceiling Price

US $ .26~.41 / Piece | Get Latest Price
Part Number:
NE856M03-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.41
  • $.38
  • $.27
  • $.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 4 GHz Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 3 V Continuous Collector Current : 0.1 A
Power Dissipation : 0.125 W Package / Case : M03    

Description

Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 12 V
Continuous Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 3 V
Power Dissipation : 0.125 W
Maximum Operating Frequency : 4 GHz
Package / Case : M03


Parameters:

Technical/Catalog InformationNE856M03-A
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.5dB @ 1GHz
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 7mA, 3V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain-
Power - Max125mW
Compression Point (P1dB)-
Package / Case3-XSOF, MiniMold
PackagingBulk
Drawing Number*
Mounting Type*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE856M03 A
NE856M03A



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