Transistors RF Bipolar Small Signal NPN High Frequency
NE85639-T1-A: Transistors RF Bipolar Small Signal NPN High Frequency
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Configuration : | Single | Transistor Polarity : | NPN | ||
Collector- Emitter Voltage VCEO Max : | 12 V | Emitter- Base Voltage VEBO : | 3 V | ||
Continuous Collector Current : | 0.1 A | Power Dissipation : | 0.2 W | ||
Package / Case : | SOT-143 | Packaging : | Reel |
Technical/Catalog Information | NE85639-T1-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 9GHz |
Noise Figure (dB Typ @ f) | 1.5dB ~ 2.1dB @ 1GHz |
Current - Collector (Ic) (Max) | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Gain | 13.5dB ~ 8.5dB |
Power - Max | 200mW |
Compression Point (P1dB) | - |
Package / Case | SOT-143-4, TO-253-4 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE85639 T1 A NE85639T1A |