NE85633-T1B

TRANS NPN 1GHZ SOT-23

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SeekIC No. : 003434999 Detail

NE85633-T1B: TRANS NPN 1GHZ SOT-23

floor Price/Ceiling Price

Part Number:
NE85633-T1B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Series: - Manufacturer: CEL
Transistor Type: NPN Typical Resistor Ratio : 1 at NPN, 4.7 at PNP
Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz Gain: 9dB
Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23    

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 12V
Supplier Device Package: SOT-23
Manufacturer: CEL
Current - Collector (Ic) (Max): 100mA
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz
Gain: 9dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Packaging: Cut Tape (CT)


Parameters:

Technical/Catalog InformationNE85633-T1B
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2dB @ 1GHz
Current - Collector (Ic) (Max)100mA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Gain9dB
Power - Max200mW
Compression Point (P1dB)-
Package / CaseSOT-23
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NE85633 T1B
NE85633T1B
NE85633TR ND
NE85633TRND
NE85633TR



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