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NE85630-T1: TRANS NPN 1GHZ SOT-323

NE85630-T1 Data Sheet

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Part Number:: NE85630-T1
Mfg:
Supply Ability:: 5000

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Upload time: 2024/12/24

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Product Details

Quick Details

Series:	-	Manufacturer:	CEL
Transistor Type:	NPN	Voltage - Collector Emitter Breakdown (Max):	12V
Typical Resistor Ratio :	0.12	Frequency - Transition:	4.5GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 2.2dB @ 1GHz ~ 2GHz	Gain:	6dB ~ 12dB
Power - Max:	150mW	DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 7mA, 3V
Current - Collector (Ic) (Max):	100mA	Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323	Supplier Device Package:	SOT-323

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Voltage - Collector Emitter Breakdown (Max): 12V
Power - Max: 150mW
Supplier Device Package: SOT-323
Manufacturer: CEL
Current - Collector (Ic) (Max): 100mA
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain: 6dB ~ 12dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V

Parameters:

Technical/Catalog Information	NE85630-T1
Vendor	NEC (VA)
Category	Discrete Semiconductor Products
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 2.2dB @ 1GHz ~ 2GHz
Current - Collector (Ic) (Max)	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Gain	12dB ~ 6dB
Power - Max	150mW
Compression Point (P1dB)	-
Package / Case	SOT-323
Packaging	Cut Tape (CT)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NE85630 T1 NE85630T1 NE85630CT ND NE85630CTND NE85630CT

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