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NE681M13-A

Transistors RF Bipolar Small Signal NPN Lo Noise Hi Gain

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SeekIC No. : 00218588 Detail

NE681M13-A: Transistors RF Bipolar Small Signal NPN Lo Noise Hi Gain

NE681M13-A Data Sheet

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Part Number:
NE681M13-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 1.5 V Continuous Collector Current : 0.065 A
Power Dissipation : 140 mW Package / Case : M13    

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 1.5 V
Continuous Collector Current : 0.065 A
Package / Case : M13
Power Dissipation : 140 mW


Parameters:

Technical/Catalog InformationNE681M13-A
VendorNEC
CategoryDiscrete Semiconductor Products
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.7dB @ 1GHz
Current - Collector (Ic) (Max)65mA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 7mA, 3V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Gain-
Power - Max140mW
Compression Point (P1dB)-
Package / CaseSurface Mount
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE681M13 A
NE681M13A



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