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NE651R479A-T1-A

Transistors RF GaAs L&S Band GaAs HJFET

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SeekIC No. : 00219196 Detail

NE651R479A-T1-A: Transistors RF GaAs L&S Band GaAs HJFET

NE651R479A-T1-A Data Sheet

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US $ 2.66~2.66 / Piece | Get Latest Price
Part Number:
NE651R479A-T1-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • 1000~2000
  • Unit Price
  • $2.66
  • $2.66
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Technology Type : HEMT Frequency : 1.9 GHz
Gain : 12 dB Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V Continuous Drain Current : 1 A
Maximum Operating Temperature : + 125 C Power Dissipation : 2.5 W
Mounting Style : SMD/SMT Package / Case : 79A    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 1 A
Frequency : 1.9 GHz
Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V
Power Dissipation : 2.5 W
Package / Case : 79A


Parameters:

Technical/Catalog InformationNE651R479A-T1-A
VendorNEC Electronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name79A
FET TypeHFET
Typical RF ApplicationISM
Typical RF ApplicationMMDS
Typical RF ApplicationWLL
Drain to Source Voltage (Vdss)8.0 V [Nom]
Voltage Gate to Source (Vgs)4.0 V [Max]
Continuous Drain Current (Id)2.80 A [Nom]
Power Dissipation15.000 W [Max]
PackagingTape & Reel, 7"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE651R479A T1 A
NE651R479AT1A



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