Transistors RF GaAs L&S Band GaAs HJFET
NE651R479A-A: Transistors RF GaAs L&S Band GaAs HJFET
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Technology Type : | HEMT | Frequency : | 1.9 GHz | ||
Gain : | 12 dB | Drain Source Voltage VDS : | 8 V | ||
Gate-Source Breakdown Voltage : | - 4 V | Continuous Drain Current : | 1 A | ||
Maximum Operating Temperature : | + 125 C | Power Dissipation : | 2.5 W | ||
Mounting Style : | SMD/SMT | Package / Case : | 79A |
Technical/Catalog Information | NE651R479A-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel JFET |
Voltage - Rated | 3.5V |
Current Rating | 700mA |
Package / Case | 79A |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE651R479A A NE651R479AA |