Transistors RF GaAs For NE6510179A-A Power at 2.4 GHz
NE6510179A-EVPW24: Transistors RF GaAs For NE6510179A-A Power at 2.4 GHz
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Technology Type : | HEMT | Frequency : | 1.9 GHz | ||
Gain : | 10 dB | Drain Source Voltage VDS : | 8 V | ||
Gate-Source Breakdown Voltage : | - 4 V | Continuous Drain Current : | 2.8 A | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 15 W | ||
Mounting Style : | SMD/SMT | Package / Case : | 79A |
Technical/Catalog Information | NE6510179A-EVPW24 |
Vendor | NEC |
Category | RF and RFID |
Type | FET |
Supplied Contents | Board |
For Use With/Related Products | NE6510179A@2.4GHz |
Frequency | 1.9GHz |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NE6510179A EVPW24 NE6510179AEVPW24 |