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NE650103M-A

Transistors RF GaAs L&S Band GaAs MESFET

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SeekIC No. : 00219233 Detail

NE650103M-A: Transistors RF GaAs L&S Band GaAs MESFET

NE650103M-A Data Sheet

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Part Number:
NE650103M-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Technology Type : MESFET Frequency : 2.3 GHz
Gain : 11 dB Drain Source Voltage VDS : 15 V
Gate-Source Breakdown Voltage : - 7 V Continuous Drain Current : 7 A
Maximum Operating Temperature : + 175 C Power Dissipation : 33 W
Mounting Style : SMD/SMT Package / Case : 3M    

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Mounting Style : SMD/SMT
Gain : 11 dB
Drain Source Voltage VDS : 15 V
Technology Type : MESFET
Frequency : 2.3 GHz
Maximum Operating Temperature : + 175 C
Gate-Source Breakdown Voltage : - 7 V
Continuous Drain Current : 7 A
Power Dissipation : 33 W
Package / Case : 3M


Parameters:

Technical/Catalog InformationNE650103M-A
VendorNEC Electronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package Name3M
FET TypeN-Channel
Typical RF ApplicationW-CDMA
Drain to Source Voltage (Vdss)15.0 V [Nom]
Voltage Gate to Source (Vgs)7.0 V [Max]
Continuous Drain Current (Id)5.00 A [Nom]
Forward Gate Current (Igf)45.0 [Nom]
Power Dissipation33.000 W [Max]
PackagingTray
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE650103M A
NE650103MA



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