Transistors RF MOSFET Power Silicon Medium Pwr LDMOSFET
NE55410GR-T3-AZ: Transistors RF MOSFET Power Silicon Medium Pwr LDMOSFET
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 0.1 GHz to 2.6 GHz | Gain : | 13.5 db at 2.14 GHz |
Output Power : | 10 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 1 A | Gate-Source Breakdown Voltage : | +/- 7 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | HTSSOP-16 |
Packaging : | Reel |
Technical/Catalog Information | NE55410GR-T3-AZ |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 28V |
Current Rating | 250mA |
Package / Case | 79A |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE55410GR T3 AZ NE55410GRT3AZ |