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NE5500179A

Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)• High power added efficiency : add = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)• High linear gain : GL = 14.0 dB TYP. (VDS = 4.8 V, IDset = 200 mA,...

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NE5500179A: Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)• High power added efficiency : add = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, ...

NE5500179A Data Sheet

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Part Number:
NE5500179A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High power added efficiency : add = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High linear gain : GL = 14.0 dB TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 10 dBm)
• Surface mount package : 5.7 * 5.7 * 1.1 mm MAX.
• Single supply : VDS = 3.0 to 6.0 V


Application

• Digital cellular phones : 4.8 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage             amplifier
• Digital cordless phones : 3.5 V final stage amplifier for DECT
• Others : General purpose amplifiers for 1.6 to 2.5 GHz TDMA applications


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
8.5
V
Gate to Source Voltage
VGSO
5.0
V
Drain Current
ID
0.25
A
Drain Current (Pulse Test)
IDNote
0.5
A
Total Power Dissipation
Ptot
10
W
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
−65 to +125
°C
Note Duty Cycle 50%, Ton 1 s


Description

The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The NE5500179A can deliver 30.0 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% pozwer added efficiency at 3.5 V, respectively.




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