Features: • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm• HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm• HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm• SINGL...
NE5510179A: Features: • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm• HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm• HI...
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
SYMBOLS | PARAMETERS | UNITS | RATINGS |
VDS | Drain Supply Voltage | V | 8.5 |
VGS | Gate Supply Voltage | V | 6 |
ID | Drain Current (continuous) | A0.5 | |
ID | Drain Current (Pulse Test)2 | A | 1.0 |
PIN | Input Power3 | dBm | 27 |
PT | Total Power Dissipation | W | 1.6 |
TCH | Channel Temperature | °C | 125 |
TSTG | Storage Temperature | °C | -55 to +125 |
The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate ateral MOSFET) and housed in a surface mount package. NE5510179A can deliver 29.5 dBm output power with 50% power dded efficiency at 1.9 GHz under the 3.5 V supply voltage, r can deliver 29 dBm output power at 2.8 V by varying the ate voltage as a power control function.