NE552R479A

Transistors RF MOSFET Power

product image

NE552R479A Picture
SeekIC No. : 00220869 Detail

NE552R479A: Transistors RF MOSFET Power

floor Price/Ceiling Price

Part Number:
NE552R479A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.45 GHz Gain : 11 dB
Output Power : 26 dBm Drain-Source Breakdown Voltage : 18 V
Continuous Drain Current : 230 mA Gate-Source Breakdown Voltage : 2 V
Maximum Operating Temperature : + 125 C Package / Case : 79A    

Description

Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 18 V
Maximum Operating Temperature : + 125 C
Frequency : 2.45 GHz
Gain : 11 dB
Output Power : 26 dBm
Continuous Drain Current : 230 mA
Gate-Source Breakdown Voltage : 2 V
Package / Case : 79A


Features:

• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V
• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
• SINGLE SUPPLY: 2.8 to 6 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX



Application

• DIGITAL CELLULAR PHONES: 3.0 V GSM1900 Pre Driver
• ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets
• OTHERS: W-LAN Short Range Wireless Retail Business Radio Special Mobile Radio



Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain Supply Voltage
V
15.0
VGS
Gate Supply Voltage
V
5.0
IDS
Drain Current
mA
300
IDS
Drain Current (Pulse Test)2
mA
600
PT
Total Power Dissipation
W
10
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty cycle 50%, Ton 1 s.



Description

NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Motors, Solenoids, Driver Boards/Modules
Semiconductor Modules
RF and RFID
Test Equipment
View more