Transistors RF MOSFET Power
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 2.45 GHz | Gain : | 11 dB | ||
Output Power : | 26 dBm | Drain-Source Breakdown Voltage : | 18 V | ||
Continuous Drain Current : | 230 mA | Gate-Source Breakdown Voltage : | 2 V | ||
Maximum Operating Temperature : | + 125 C | Package / Case : | 79A |
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VDS |
Drain Supply Voltage |
V |
15.0 |
VGS |
Gate Supply Voltage |
V |
5.0 |
IDS |
Drain Current |
mA |
300 |
IDS |
Drain Current (Pulse Test)2 |
mA |
600 |
PT |
Total Power Dissipation |
W |
10 |
TCH |
Channel Temperature |
°C |
125 |
TSTG |
Storage Temperature |
°C |
-55 to +125 |
NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.