NE5520379A

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Maximum Operating Temperature :
Packaging :
Continuous Drain Current : 1.5 A
Package / Case : 79A
Gate-Source Breakdown Voltage : 5 V


Features:

• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +35.5 dBm TYP
• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz
• HIGH POWER ADDED EFFICIENCY: 65% TYP @ V_DS = 3.2 V, f = 915 MHz
• SINGLE SUPPLY: 2.8 to 6.0 V
• CLASS AB OPERATION
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX


Application

• DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets
• OTHERS: Two-Way Pagers Retail Business Radio Special Mobile Radio Short Range Wireless


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VDS	Drain Supply Voltage	V	15.0
VGS	Gate Supply Voltage	V	5.0
ID	Drain Current (continuous)	A	1.5
ID	Drain Current (Pulse Test)2	A	3.0
PT	Total Power Dissipation	W	20
TCH	Channel Temperature	°C	125
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty Cycle 50%, Ton 1 s.


Description

NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. NE5520379A can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.