NE5511279A

Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Gain : 15 dB
Gate-Source Breakdown Voltage : 6 V
Continuous Drain Current : 3 A
Maximum Operating Temperature : + 125 C
Package / Case : 79A
Output Power : 40 dBm
Frequency : 900 MHz
Drain-Source Breakdown Voltage : 20 V


Features:

• HIGH OUTPUT POWER: P_out = 40.0 dBm TYP., f = 900 MHz, V_DS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, V_DS = 7.5 V,
• HIGH POWER ADDED EFFICIENCY: _add = 48% TYP., f = 900 MHz, V_DS = 7.5 V, _add = 50% TYP., f = 460 MHz, V_DS = 7.5 V,
• HIGH LINEAR GAIN: G_L = 15.0 dB TYP., f = 900 MHz, V_DS = 7.5 V, G_L = 18.5 dB TYP., f = 460 MHz, V_DS = 7.5 V,
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:


Application

• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VDS	Drain Supply Voltage2	V	20.0
VGS	Gate Supply Voltage	V	6.0
ID	Drain Current	A	3.0
PT	Total Power Dissipation	W	20
TCH	Channel Temperature	°C	125
TSTG	Storage Temperature	°C	-55 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. VDS must be used under 12 V on RF operation.


Description

NEC's NE5511279A is an N-Channel silicon power laterally dif fused MOSFET spe cial ly designed as the transmission power amplifier for 7.5 V radio systems. Die are man u - fac tured us ing NEC's NEWMOS1 NE5511279A tech nol o gy and housed in a surface mount pack age. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage.