Transistors RF MOSFET Power UHF Band RF Power
NE5511279A-T1-A: Transistors RF MOSFET Power UHF Band RF Power
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Features: • High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 G...
Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 900 MHz | Gain : | 15 dB |
Output Power : | 40 dBm | Drain-Source Breakdown Voltage : | 20 V |
Continuous Drain Current : | 3 A | Gate-Source Breakdown Voltage : | 6 V |
Maximum Operating Temperature : | + 125 C | Package / Case : | 79A |
Packaging : | Reel |
Technical/Catalog Information | NE5511279A-T1-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 7.5V |
Current Rating | 2.5A |
Package / Case | 79A |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | NE5511279A T1 A NE5511279AT1A |