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NE5510279A

Features: • HIGH OUTPUT POWER:32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm• HIGH POWER ADDED EFFICIENCY:45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm• HIGH LINEAR GAIN:10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm•...

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NE5510279A: Features: • HIGH OUTPUT POWER:32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm• HIGH POWER ADDED EFFICIENCY:45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 ...

NE5510279A Data Sheet

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Part Number:
NE5510279A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

• HIGH OUTPUT POWER:
32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
• HIGH POWER ADDED EFFICIENCY:
45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
• HIGH LINEAR GAIN:
10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm
• SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY: 2.8 to 6.0 V


Application

• DIGITAL CELLULAR PHONES
• OTHERS


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VDS
Drain Supply Voltage
V
8.5
VGS
Gate Supply Voltage
V
6
ID
Drain Current (continuous)
A
1.0
ID
Drain Current (Pulse Test)2
A
2.0
PIN
Input Power3
dBm
30
PT
Total Power Dissipation
W
2.4
TCH
Channel Temperature
°C
125
TSTG
Storage Temperature
°C
-55 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Duty Cycle 50%, ton = 1 ms.
3. Frequency = 1.8 GHz, VDS = 3.5 V.


Description

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package. NE5510279A can deliver 32 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.5 V supply voltage, or can deliver 31 dBm output power at 2.8 V by varying the gate voltage as a power control function.




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