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NE52418

MOSFET NPN L-S Lo Noise Amp

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SeekIC No. : 00165710 Detail

NE52418: MOSFET NPN L-S Lo Noise Amp

NE52418 Data Sheet

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Part Number:
NE52418
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Drain-Source Breakdown Voltage : 2.5 V Continuous Drain Current : 3 mA
Resistance Drain-Source RDS (on) : 50 Ohms Mounting Style : SMD/SMT
Package / Case : Mini-4    

Description

Transistor Polarity :
Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Continuous Drain Current : 3 mA
Resistance Drain-Source RDS (on) : 50 Ohms
Drain-Source Breakdown Voltage : 2.5 V
Package / Case : Mini-4


Features:

• HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50
• LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50
• OIP3 = +25 dBm TYP at f = 2 GHZ, VCE = 2 V, IC = 10 mA, ZS = ZOPT ,1TONE
• 4 PIN SUPER MINI MOLD PACKAGE
• GROUNDED EMITTER TRANSISTOR


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V
5.0
VCBO
Collector to Base Voltage
V
3.0
VEBO
Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
40
IB
Base Current
mA
0.3
PT
Total Power Dissipation
mW
150
Tj
Junction Temperature
°C
+125
TSTG
Storage Temperature
°C
-65 to +125
Note:
1. Operation in excess of any of these parameters may result in permanent damage.


Description

NEC's NE52418 is a low cost NPN GaAs HBT(InGaP) suitable for front end LNA's in L/S band mobile communication applications. The NE52418 is housed in a 4-pin super mini-mold package, making it ideal for high-density design. NEC's stringent quality assurance and test procedures ensure the highest reliability performance




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