Features: • Gain to 1.5GHz• 850MHz bandwidth• High impedance differential input• 50W differential output• Single 5V power supply• 0 - 1V gain control pin• >60dB gain control range at 200MHz• 26dB maximum gain differential• Exceptional VCONTR...
NE5209: Features: • Gain to 1.5GHz• 850MHz bandwidth• High impedance differential input• 50W differential output• Single 5V power supply• 0 - 1V gain control pin• &...
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SYMBOL | PARAMETER |
RATING |
UNITS |
VCC |
-0.5 to +8.0 |
V | |
Power dissipation, TA = 25oC (still air)1 | |||
PD | 16-Pin Plastic DIP |
1450 |
mW |
16-Pin Plastic SO |
1100 |
mW | |
TJMAX | Maximum operating junction temperature |
150 |
°C |
TSTG | Storage temperature range |
-65 to +150 |
°C |
The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture.
The NE5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kW) differential inputs. The output is 50W differential.
Therefore, the NE5209 can simultaneously perform AGC, impedance transformation, and the balun functions. The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a comparatively slow rate as the gain is reduced. NE5209 is an important feature when building linear AGC systems.