Features: · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W)· 4-pin super minimold package· Grounded Emitter TransistorSpecificatio...
NE52118: Features: · For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 W) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 ...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to Emitter Voltage |
VCEO |
5.0 |
V |
Collector to Base Voltage |
VCBO |
3.0 |
V |
Emitter to Base Voltage |
VEBO |
3.0 |
V |
Collector Current |
IC |
7 |
mA |
Base Current |
IB |
0.3 |
mA |
Total Power Dissipation |
Ptot |
30 |
mW |
Junction Temperature |
Tj |
+125 |
°C |
Storage Temperature |
Tstg |
65 to +125 |
°C |