NE461M02

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging :


Features:

• HIGH COLLECTOR CURRENT:
  250 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
  (SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
  27 dBm TYP at 1 GHz
• HIGH IP3:
  37 dBm TYP at 1 GHz


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCBO	Collector to Base Voltage	V	30
VCEO	Collector to Emitter Voltage	V	15
VEBO	Emitter to Base Voltage	V	3.0
IC	Collector Current	mA	250
PT	Total Power Dissipation2	W	2.0
TJ	Junction Temperature		150
TSTG	Storage Temperature		-65 to +150

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramic substrate (copper plating).


Description

The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications.