NE46134

Configuration :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Maximum DC Collector Current :
Power Dissipation :
Package / Case :
Packaging :


Features:

• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCBO	Collector to Base Voltage	V	30
VCEO	Collector to Emitter Voltage	V	15
VEBO	Emitter to Base Voltage	V	3
IC	Collector Current	mA	250
PT	Total Power Dissipation NE461002 NE461343	W W	3.75 2.0
TJ	Junction Temperature NE46100 NE46134		200 150
TSTG	Storage Temperature NE46100 NE46134		-65 to +200 -65 to +150

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions).
3. Packaged device mounted on 0.7 mm x 2.5 cm2 double sided ceramic substrate (copper plating).


Description

NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. NE461 series exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.