NE3509M04-A

Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET

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SeekIC No. : 00219079 Detail

NE3509M04-A: Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET

floor Price/Ceiling Price

US $ .58~.91 / Piece | Get Latest Price
Part Number:
NE3509M04-A
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $.91
  • $.79
  • $.67
  • $.58
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Technology Type : HEMT Frequency : 2 GHz
Gain : 17.5 dB Noise Figure : 0.4 dB
Forward Transconductance gFS (Max / Min) : 80 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 60 mA
Maximum Operating Temperature : + 150 C Power Dissipation : 150 mW
Mounting Style : SMD/SMT Package / Case : FTSMM-4 (M04)    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Frequency : 2 GHz
Gain : 17.5 dB
Noise Figure : 0.4 dB
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Forward Transconductance gFS (Max / Min) : 80 mS
Continuous Drain Current : 60 mA
Power Dissipation : 150 mW
Package / Case : FTSMM-4 (M04)


Parameters:

Technical/Catalog InformationNE3509M04-A
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel JFET
Voltage - Rated 38V
Current Rating60mA
Package / CaseS-Mini 4P
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NE3509M04 A
NE3509M04A



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