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NE350184C-T1A

Transistors RF GaAs Low Noise HJ FET

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SeekIC No. : 00219230 Detail

NE350184C-T1A: Transistors RF GaAs Low Noise HJ FET

NE350184C-T1A Data Sheet

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Part Number:
NE350184C-T1A
Mfg:
CEL
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Technology Type : HEMT Frequency : 20 GHz
Gain : 13.5 dB Noise Figure : 0.7 dB
Forward Transconductance gFS (Max / Min) : 40 mS Drain Source Voltage VDS : 4 V
Gate-Source Breakdown Voltage : - 3 V Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 150 C Power Dissipation : 165 mW
Mounting Style : SMD/SMT Package / Case : Micro-X Ceramic (84 C)    

Description

Continuous Drain Current : 70 mA
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Noise Figure : 0.7 dB
Technology Type : HEMT
Gate-Source Breakdown Voltage : - 3 V
Frequency : 20 GHz
Gain : 13.5 dB
Drain Source Voltage VDS : 4 V
Power Dissipation : 165 mW
Forward Transconductance gFS (Max / Min) : 40 mS
Package / Case : Micro-X Ceramic (84 C)


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