Features: `Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP, Ga = 15.0 dB TYP. at f = 4 GHz`Gate Width: Wg = 280 mSpecifications Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS -3.0 V Drain Current ID IDSS mA Total Power Temperature Ptot 16...
NE33284A: Features: `Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP, Ga = 15.0 dB TYP. at f = 4 GHz`Gate Width: Wg = 280 mSpecifications Drain to Source Voltage VDS 4.0 V Gate...
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Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
-3.0
V
Drain Current
ID
IDSS
mA
Total Power Temperature
Ptot
160
mA
Channel Temperature
Tch
150
Storage Temperature
Tstg
-65 to +150
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.