NE33284A

Features: `Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP, Ga = 15.0 dB TYP. at f = 4 GHz`Gate Width: Wg = 280 mSpecifications Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS -3.0 V Drain Current ID IDSS mA Total Power Temperature Ptot 16...

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SeekIC No. : 004433335 Detail

NE33284A: Features: `Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP, Ga = 15.0 dB TYP. at f = 4 GHz`Gate Width: Wg = 280 mSpecifications Drain to Source Voltage VDS 4.0 V Gate...

floor Price/Ceiling Price

Part Number:
NE33284A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Description



Features:

`Super Low Noise Figure & High Associated Gain
  NF = 0.35 dB TYP, Ga = 15.0 dB TYP. at f = 4 GHz
`Gate Width: Wg = 280 m



Specifications

Drain to Source Voltage VDS
4.0 V
Gate to Source Voltage VGS
-3.0 V
Drain Current ID
IDSS
mA
Total Power Temperature Ptot
160 mA
Channel Temperature Tch
150
Storage Temperature Tstg
-65 to +150




Description

The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.




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