Position: Home  > All Categories> Integrated Circuits (ICs) > NE33200

NE33200

Features: • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz• HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz• GATE LENGTH: 0.3 m• GATE WIDTH: 280 mSpecifications SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage...

product image

NE33200 Picture
See larger image
SeekIC No. : 004433334 Detail

NE33200: Features: • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz• HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz• GATE LENGTH: 0.3 m• GATE WIDTH: 280 mSpecifications SYMBOL...

NE33200 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NE33200
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• VERY LOW NOISE FIGURE:
  0.75 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
  10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 m
• GATE WIDTH: 280 m


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 4.0
VGS Gate to Source Voltage V -3.0
IDS Drain Current mA IDSS
IGRF Gate Current A 280
PIN RF Input (CW) dBm 15
TCH Channel Temperature 175
TSTG Storage Temperature -65 to +175
PT2 Total Power Dissipation mW 240

Note:
1.Operation in excess of any one of these parameters may result in permanent damage.
2.With chip mounted on infinite heat sink.


Description

The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. NE33200's excellent low noise figure and high associated gain make it suitable for commercial and industrial applications.

NEC's NE33200 stringent quality assurance and test procedures assure the highest reliability and performance.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cable Assemblies
CS1W-CN114
XW2Z-500T
Integrated Circuits (ICs)
TA8435H
1MB12-140
Optical Inspection Equipment
AA924
A21K4B
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Prototyping Products
AVT4168
DE1
View more