Transistors RF GaAs 84C LO NO HJ FET
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Technology Type : | pHEMT | Frequency : | 12 GHz | ||
Gain : | 12.5 dB | Noise Figure : | 0.45 dB | ||
Forward Transconductance gFS (Max / Min) : | 60 mS | Drain Source Voltage VDS : | 4 V | ||
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 90 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 165 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | Micro-X Ceramic (84 C) |