Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Continuous Drain Current
: 0.9 A
Resistance Drain-Source RDS (on)
: 0.5 Ohms
Package / Case
: SuperSOT-3
Features: ·-0.9 A, -30 V. RDS(ON) = 0.5 W @ VGS = -4.5 VRDS(ON) = 0.3 W @ VGS = -10 V.
·Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.Specifications
|
Symbol |
Parameter |
NDS8410 |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
-30
±20
±0.9
±10
0.5
0.46
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous
Pulsed |
(Note 1a) |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b) |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
DescriptionThese P -Channel logic level enhancement mode power field effect transistors NDS352AP are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS352AP is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parameters: | Technical/Catalog Information | NDS352AP |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 900mA |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 135pF @ 15V |
| Power - Max | 460mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
| Package / Case | SSOT-3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS352AP
NDS352AP
NDS352APDKR ND
NDS352APDKRND
NDS352APDKR
|
NDS352AP Data Sheet
