NDS351N

MOSFET DISC BY MFG 2/02

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SeekIC No. : 00165237 Detail

NDS351N: MOSFET DISC BY MFG 2/02

floor Price/Ceiling Price

Part Number:
NDS351N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 1.1 A
Resistance Drain-Source RDS (on) : 160 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 160 mOhms
Continuous Drain Current : 1.1 A
Package / Case : SuperSOT-3


Features:

`1.1A, 30V. RDS(ON) = 0.25  @ VGS = 4.5V.
`Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Compact industry standard SOT-23 surface mount package.



Specifications

Symbol
Parameter
NDS351N
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
20
± 1.1
± 10
0.5
0.46
-55 to 150
V
V
A

W

°C
ID
Maximum Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)

250
75

°C/W
°C/W



Description

These N-Channel logic level enhancement mode power field effect transistors NDS351N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS351N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDS351N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.1A
Rds On (Max) @ Id, Vgs160 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 10V
Power - Max460mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs3.5nC @ 5V
Package / CaseSOT-23
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NDS351N
NDS351N
NDS351NCT ND
NDS351NCTND
NDS351NCT



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