MOSFET DISC BY MFG 2/02
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 1.1 A | ||
Resistance Drain-Source RDS (on) : | 160 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SuperSOT-3 | Packaging : | Reel |
Symbol |
Parameter |
NDS351N |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 20 ± 1.1 ± 10 0.5 0.46 -55 to 150 |
V V A W °C | |
ID |
Maximum Drain Current - Continuous - Pulsed |
(Note 1a) | ||
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) | ||
TJ,TSTG | Operating and Storage Temperature Range |
RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
250 |
°C/W °C/W |
These N-Channel logic level enhancement mode power field effect transistors NDS351N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS351N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Technical/Catalog Information | NDS351N |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.1A |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 1.4A, 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 10V |
Power - Max | 460mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 3.5nC @ 5V |
Package / Case | SOT-23 |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NDS351N NDS351N NDS351NCT ND NDS351NCTND NDS351NCT |