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NDP7052

Features: `75 A, 50 V. RDS(ON) = 0.01 @ VGS= 10 V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design f...

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NDP7052: Features: `75 A, 50 V. RDS(ON) = 0.01 @ VGS= 10 V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zen...

NDP7052 Data Sheet

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Part Number:
NDP7052
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`75 A, 50 V. RDS(ON) = 0.01 @ VGS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
Parameter
 NDP7052 NDB7052
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS < 1 M)
50
V
VDSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID Drain Current - Continuous
- Pulsed
75
A
225
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
150
W
1
W/
TJ,TSTG Operating and Storage Temperature
-65 to 175



Description

These N-Channel enhancement mode power field effect transistors NDP7052 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP7052 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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