Position: Home  > All Categories> Integrated Circuits (ICs) > NDP7051

NDP7051

Features: `70A, 50V. RDS(ON) = 0.013 @ VGS=10V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design for e...

product image

NDP7051 Picture
See larger image
SeekIC No. : 004433279 Detail

NDP7051: Features: `70A, 50V. RDS(ON) = 0.013 @ VGS=10V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener d...

NDP7051 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NDP7051
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`70A, 50V. RDS(ON) = 0.013 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
Parameter
 NDP7051 NDB7051
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS < 1 M)
50
V
VDSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID Drain Current - Continuous
- Pulsed
70
A
210
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
130
W
0.87
W/
TJ,TSTG Operating and Storage Temperature
-65 to 175
TL Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275



Description

These N-Channel enhancement mode power field effect transistors NDP7051 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP7051 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Discrete Semiconductor Products
T508N12TOF
MUR20040
Crystals and Oscillators
WT325BI0030.000000
2SB49
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Test Equipment
TOP853
TOP2005
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more