Features: `15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design...
NDP510BE: Features: `15 and 13A, 100V. RDS(ON) = 0.12 and 0.15.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Z...
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Symbol |
Parameter |
NDP510A NDP510AE NDB510A NDB510AE |
NDP510B NDP510BE NDB510B NDB510BE |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
15 |
13 |
A |
60 |
52 | |||
PD |
Total Power Dissipation Derate above 25°C |
75 |
W | |
0.5 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
These N-channel enhancement mode power field effect transistors NDP510BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP510BE is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.