Features: `26 A, 60 V. RDS(ON) = 0.05 @ VGS= 10 V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design f...
NDP5060: Features: `26 A, 60 V. RDS(ON) = 0.05 @ VGS= 10 V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zen...
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Symbol |
Parameter |
NDP5060 |
NDB5060 |
Units |
VDSS | Drain-Source Voltage |
60 |
V | |
VDGR | Drain-Gate Voltage (RGS 1 M) |
60 |
V | |
VGSS | Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
±20 |
V | |
±40 | ||||
ID | Drain Current - Continuous - Pulsed |
26 |
A | |
78 | ||||
PD | Total Power Dissipation @ TC = 25°C Derate above 25°C |
68 |
W | |
0.45 |
W/ | |||
TJ,TSTG | Operating and Storage Temperature Range |
-65 to 175 |
These N-Channel enhancement mode power field effect transistors NDP5060 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP5060 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.