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NDH854P

Features: `-5.1 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V RDS(ON) = 0.052 @ VGS = -4.5V.`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.`High density cell design for extremely low RDS(ON).`Exceptional on-resistance and maximum DC curr...

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NDH854P: Features: `-5.1 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V RDS(ON) = 0.052 @ VGS = -4.5V.`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilitie...

NDH854P Data Sheet

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Part Number:
NDH854P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`-5.1 A, -30 V. RDS(ON) = 0.032  @ VGS = -10 V RDS(ON) = 0.052  @ VGS = -4.5V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
NDH854P
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
-30
±20
-5.1
-15
1.8
1
0.9
-55 to 150
V
V
A

W


°C
ID
 Drain Current Continuous Pulsed (Note 1a)
PD
 Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
</tab
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1a)
(Note 1)

70
20

 °C/W
°C/W



Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors of NDH854P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH854P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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