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NDH853N

Features: `7.6 A, 30 V. RDS(ON) = 0.017 @ VGS = 10 VRDS(ON) = 0.025 @ VGS = 4.5 V.`High density cell design for extremely lowRDS(ON) `Proprietary SuperSOTTM-8 small outline surface mount`package with high power and current handling capability.PinoutSpecifications Symbol Parameter ND...

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SeekIC No. : 004433221 Detail

NDH853N: Features: `7.6 A, 30 V. RDS(ON) = 0.017 @ VGS = 10 VRDS(ON) = 0.025 @ VGS = 4.5 V.`High density cell design for extremely lowRDS(ON) `Proprietary SuperSOTTM-8 small outline surface mount`package wi...

NDH853N Data Sheet

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Part Number:
NDH853N
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`7.6 A, 30 V. RDS(ON) = 0.017 @ VGS = 10 V  RDS(ON)  = 0.025 @ VGS = 4.5 V.
`High density cell design for extremely low RDS(ON)
`Proprietary SuperSOTTM-8 small outline surface mount
`package with high power and current handling capability.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
NDH853N
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±20
7.6
23
1.8
1
0.9
-55 to 150
V
V
A

W


°C
ID
 Drain Current Continuous Pulsed (Note 1a)
PD
 Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1a)
(Note 1)

70
20

 °C/W
°C/W



Description

These N-Channel enhancement mode power field effect transistors NDH853N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH853N is particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.




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