NDH8521C

Resistance Drain-Source RDS (on) :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SuperSOT-8
Continuous Drain Current : 3.8 A, - 2.7 A


Features:

`N-Ch 3.8 A, 30V, R<sub>DS(ON)=</sub>0.033 @ V<sub>GS</sub>= 10 V R<sub>DS(ON)=</sub>0.005 @ V<sub>GS</sub>=2.7 V P-Ch -2.7 A, -30V, R<sub>DS(ON)=</sub>0.07 @ V<sub>GS</sub>= -10 V R<sub>DS(ON) =</sub>0.015 @ V<sub>GS</sub>= -4.5 V.
`Proprietary SuperSOT^TM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low R<sub>DS(ON).</sub>
`Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage - Continuous		30 ±20 3.8 10.5	-30 ±20 -2.7 -8	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1)
PD	Power Dissipation for Single Operation	(Note 1)	0.8 -55 to 150
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1) (Note 1)

156 40

°C/W °C/W

Description

These dual N- and P-Channel enhancement mode power field effect transistors NDH8521C are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH8521C is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.