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NDH8503N

Features: `3.8 A, 30 V. RDS(ON) = 0.033 @ VGS = 10 V RDS(ON) = 0.05 @ VGS = 4.5 V.`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.`High density cell design for extremely low RDS(ON).`Exceptional on-resistance and maximum DC current...

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NDH8503N: Features: `3.8 A, 30 V. RDS(ON) = 0.033 @ VGS = 10 V RDS(ON) = 0.05 @ VGS = 4.5 V.`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.`...

NDH8503N Data Sheet

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Part Number:
NDH8503N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`3.8 A, 30 V. RDS(ON) = 0.033 @ VGS = 10 V RDS(ON) = 0.05 @ VGS = 4.5 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
NDH8303N
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage - Continuous
30
±20
3.8
10.5
0.8
-55 to 150
V
V
A
W

°C
ID
 Drain Current Continuous Pulsed (Note 1)
PD
 Maximum Power Dissipation (Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1)
(Note 1)

156
40

 °C/W
°C/W



Description

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors NDH8503N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDH8503N is particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.




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