NDH8502P

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 110 mOhms
Package / Case : SuperSOT-8


Features:

` -2.2 A, -30 V. R<sub>DS(ON)</sub> = 0.11 @ V<sub>GS</sub> = -10 V R<sub>DS(ON)</sub> = 0.18 @ V<sub>GS</sub> = -4.5 V.
` Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
` High density cell design for extremely low R<sub>DS(ON).</sub>
` Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		NDH8502P	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage - Continuous		-30 ±20 -2.2 -10 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1)
PD	Maximum Power Dissipation	(Note 1 )
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
</table

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1) (Note 1)

156 40

°C/W °C/W

Description

SuperSOT^TM-8 P-Channel enhancement mode power field effect transistors NDH8502P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDH8502P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.