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NDH8447

Features: `-4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095 @ VGS = -4.5V`High density cell design for extremely low RDS(ON).`Enhanced SuperSOTTM-8 small outline surface mount`package with high power and current handling capability.PinoutSpecifications Symbol Parameter NDH84...

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SeekIC No. : 004433217 Detail

NDH8447: Features: `-4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095 @ VGS = -4.5V`High density cell design for extremely low RDS(ON).`Enhanced SuperSOTTM-8 small outline surface mount`package with ...

NDH8447 Data Sheet

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Part Number:
NDH8447
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Description



Features:

`-4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095 @ VGS = -4.5V
`High density cell design for extremely low RDS(ON).
`Enhanced SuperSOTTM-8 small outline surface mount
`package with high power and current handling capability.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
NDH8447
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
-30
-20
-4.4
-20
1.8
1
0.9
-55 to 150
V
V
A

W


°C
ID
 Drain Current Continuous Pulsed (Note 1a)
PD
 Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
</tab
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1a)
(Note 1)

70
20

 °C/W
°C/W



Description

These P-Channel enhancement mode power field effect transistors NDH8447 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH8447 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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