NDH834P

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 35 mOhms at 4.5 V
Continuous Drain Current : 5.6 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

`-5.6 A, -20 V. R<sub>DS(ON)</sub> = 0.035  @ V<sub>GS</sub> = -4.5 V R<sub>DS(ON)</sub> = 0.045  @ V<sub>GS</sub> = -2.7V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low R<sub>DS(ON).</sub>
`Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		NDH834P	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-20 ±8 -5.6 -15 1.8 1 0.9 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
</tabl

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

70 20

°C/W °C/W

Description

SuperSOT^TM-8 P-Channel enhancement mode power field effect transistors NDH834P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH834P is particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.