NDH832P

MOSFET P-Channel FET Enhancement Mode

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SeekIC No. : 00161819 Detail

NDH832P: MOSFET P-Channel FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDH832P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : - 8 V Continuous Drain Current : - 4.2 A
Resistance Drain-Source RDS (on) : 0.06 Ohms Configuration : Single Quint Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : - 8 V
Resistance Drain-Source RDS (on) : 0.06 Ohms
Package / Case : SSOT-8
Configuration : Single Quint Drain Dual Source
Continuous Drain Current : - 4.2 A


Features:

`-4.2A, -20V. RDS(ON) = 0.06 @ VGS = -4.5V RDS(ON) = 0.08 @ VGS = -2.7V.
`High density cell design for extremely low RDS(ON).
`Enhanced SuperSOTTM-8 small outline surface mount
`package with high power and current handling capability.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDH832P
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-20
-8
-4.2
-15
1.8
1
0.9
-55 to 150
V
V
A

W


°C
ID
Drain Current Continuous Pulsed (Note 1a)
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
</tabl
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)

70
20

°C/W
°C/W



Description

These P-Channel enhancement mode power field effect transistors NDH832P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH832P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDH832P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.2A
Rds On (Max) @ Id, Vgs60 mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) @ Vds 1000pF @ 10V
Power - Max900mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs30nC @ 4.5V
Package / CaseSSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDH832P
NDH832P



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