Position: Home  > All Categories> Integrated Circuits (ICs) > NDB7061

NDB7061

Features: `64A, 60V. RDS(ON) = 0.016 @ VGS=10V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design for e...

product image

NDB7061 Picture
See larger image
SeekIC No. : 004433207 Detail

NDB7061: Features: `64A, 60V. RDS(ON) = 0.016 @ VGS=10V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener d...

NDB7061 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NDB7061
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`64A, 60V. RDS(ON) = 0.016 @ VGS=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol
Parameter
 NDP7061 NDB7061
Units
VDSS Drain-Source Voltage
60
V
VDGR Drain-Gate Voltage (RGS 1 M)
60
V
VDSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID Drain Current - Continuous
- Pulsed
64
A
190
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
130
W
0.87
W/
TJ,TSTG Operating and Storage Temperature
-65 to 175
TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
275



Description

These N-Channel enhancement mode power field effect transistors NDB7061 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB7061 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Resistors
A101G
3006P-1-205LF
Cables, Wires
821-0814-a
415-0100-150
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
View more