NDB7051

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 70 A
Resistance Drain-Source RDS (on) : 0.011 Ohms
Package / Case : TO-263AB


Features:

`70A, 50V. R<sub>DS(ON)</sub> = 0.013 @ V<sub>GS</sub>=10V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R<sub>DS(ON)</sub>.
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP7051	NDB7051	Units
VDSS	Drain-Source Voltage	50		V
VDGR	Drain-Gate Voltage (RGS < 1 M)	50		V
VDSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s)	± 20		V
		± 40
ID	Drain Current - Continuous - Pulsed	70		A
		210
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	130		W
		0.87		W/
TJ,TSTG	Operating and Storage Temperature	-65 to 175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	275

Description

These N-Channel enhancement mode power field effect transistors NDB7051 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB7051 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDB7051
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	70A
Rds On (Max) @ Id, Vgs	13 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	1930pF @ 25V
Power - Max	130W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDB7051 NDB7051