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NDB7051L

Features: `67 A, 50 V. RDS(ON) = 0.0145 @ VGS= 5 V RDS(ON) = 0.0115 @ VGS= 10 V.`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum jun...

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SeekIC No. : 004433205 Detail

NDB7051L: Features: `67 A, 50 V. RDS(ON) = 0.0145 @ VGS= 5 V RDS(ON) = 0.0115 @ VGS= 10 V.`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.`Rugged internal source-dr...

NDB7051L Data Sheet

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Part Number:
NDB7051L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`67 A, 50 V. RDS(ON) = 0.0145 @ VGS= 5 V
                     RDS(ON) = 0.0115 @ VGS= 10 V.
`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Specifications

Symbol Parameter
NDP7051L
NDB7051L
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS 1 M)
50
V
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
±16
V
±25
ID Drain Current - Continuous
- Pulsed
67
A
200
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
130
W
0.87
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175



Description

These logic level N-Channel enhancement mode power field effect transistors NDB7051L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB7051L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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