NDB7060L

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 150W
Input Capacitance (Ciss) @ Vds: 4000pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 75A
Supplier Device Package: D²PAK
Manufacturer: Fairchild Semiconductor
Rds On (Max) @ Id, Vgs: 15 mOhm @ 37.5A, 5V
Gate Charge (Qg) @ Vgs: 115nC @ 5V


Features:

`75A, 60V. R<sub>DS(ON)</sub> = 0.015 @ V<sub>GS</sub> = 5V
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.


Specifications

Symbol	Parameter	NDP7060L	NDB7060L	Units
VDSS	Drain-Source Voltage	60		V
VDGR	Drain-Gate Voltage (RGS 1 M)	60		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs)	± 20		V
		± 40
ID	Drain Current - Continuous - Pulsed	75		A
		225
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	150		W
		1		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175

Description

These logic level N-Channel enhancement mode power field effect transistors NDB7060L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB7060L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDB7060L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	15 mOhm @ 37.5A, 5V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	150W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	115nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDB7060L NDB7060L NDB7060LCT ND NDB7060LCTND NDB7060LCT