NDB6051

Features: `48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.`175°C maximum junction temperature rating.`High density cell design ...

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SeekIC No. : 004433196 Detail

NDB6051: Features: `48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V.`Critical DC electrical parameters specified at elevated temperature.`Rugged internal source-drain diode can eliminate the need for an external Ze...

floor Price/Ceiling Price

Part Number:
NDB6051
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Description



Features:

`48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.



Specifications

Symbol Parameter NDP6051 NDB6051
Units
VDSS Drain-Source Voltage
50
V
VDGR Drain-Gate Voltage (RGS 1 M)
50
V
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
± 20
V
± 40
ID Drain Current - Continuous
- Pulsed
48
A
144
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
100
W
0.67
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
275



Description

These N-Channel enhancement mode power field effect transistors NDB6051 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDB6051 is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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